m s c1054 . p d f 3 / 22 / 01 all r a tings: d e v ice packaged in t o -3 or m icrosemi c oolpack package, t c = 25 c unless other w ise specified msafa1n100d fast mosfet die for implantable cardio defibrillator applications description: ? n-channel enhancement mode high density mosfet die ? passivation: oxynitride, 4um ? frontside (top) metallization: al/1%cu for aluminum wire bonding, 9 um typical. ? backside metallization: ti ? ni (1 um) ? ag (0.2 um) for soft solder attach features: ? low on-state resistance ? avalanche and surge rated ? high freq. switching ? ultra low leakage current ? uis rated ? available with lot acceptance testing spec msafa1n100dl, "-l" suffix maximum ratings: static electrical characteristics: 2830 s. fairview street santa ana, ca 92704 phone: (714) 979-8220 fax: (714) 559-5989 symbol parameter value unit v dss drain - source voltage 1000 volts v gs gate - source voltage 20 volts i d1 continuous drain current @ t c = 25 c 1 amps i d2 continuous drain current @ t c = 100 c .8 amps i dm1 pulsed drain current @ t c = 25 c 4 amps i ar avalanche current 1 amps e ar repetitive avalanche energy tbd mj e as single pulse avalanche energy tbd mj t j, t stg operating and storage: junction temperature range -55 to 150 c symbol characteristic / test conditions min typ max unit bv dss drain - source breakdown voltage (v gs = 0v, i d = 0.25ma) 1000 volts v gs(th)2 gate threshold voltage (v gs = v ds , i d = 1 m a, t j = 37 c 3.4 volts v gs(th)1 gate threshold voltage (v gs = v ds , i d = 1 m a, t j = 25 c 2 3.5 4.5 volts r ds(on)1 drain ? source on-state resistance (v gs = 10v, i d = i d1, t j = 25 c) 12.5 13.5 ohm r ds(on)2 drain ? source on-state resistance (v gs = 7v, i d = 5?150 ma , t j = 37 c) 12.5 ohm r ds(on)3 drain ? source on-state resistance (v gs = 7v, i d = 5?150 ma , t j = 25 c) 11.5 ohm r ds(on)4 drain ? source on-state resistance (v gs = 7v, i d = 5?150 ma , t j = 60 c) 15 ohm r ds(on)5 drain ? source on-state resistance (v gs = 7 v, i d = i d1, t j = 1 25 c) 23.5 ohm i dss1 zero gate voltage drain current (v ds = 80%bv dss , v gs = 0v, t j = 25 c) 10 ua i dss2 zero gate voltage drain current (v ds = 80%bv dss , v gs = 0v, t j = 37 c) 1 ua i dss3 zero gate voltage drain current (v ds = 80%bv dss , v gs = 0v, t j = 1 25 c) 100 ua i gss1 gate-source leakage current (v gs = 20v, v ce =0v) 100 na i gss2 gate-source leakage current (v gs = 20v v ce =0v), tj= 37 c 10 na i gss3 gate-source leakage current (v gs = 20v v ce =0v), tj= 125 c 500 na
m s c1054 . p d f 3 / 22 / 01 all r a tings: d e v ice packaged in t o -3 or m icrosemi c oolpack package, t c = 25 c unless other w ise specified msafa1n100d fast mosfet die for implantable cardio defibrillator applications dynamic characteristics: repetitive rating: pulse width limited by maximum junction temperature. i c = i c2, v cc = 50v, r ce = 25 ? ?? ? , l = 300 ? h, t j = 25 c t j = 150 c see mil-std-750 method 3471 die probe parameters (100% tests): symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v 290 350 pf c oss output capacitance v ds = 25v 36 45 pf c rss reverse transfer capacitance f = 1 mhz 15 25 pf qg total gate charge v gs = 10v 20 nc qgs gate-source charge v ds = 0.5bv dss 1 nc qgd gate-drain ("miller") charge i c = 20 ma 10 nc t d (on) turn-on delay time resistive switching (25 c) 6.3 ns t r rise time v gs = 10v, v ds = 0.5bv dss 5.9 ns t d (off) turn-off delay time i d = 20 ma 315 ns t f fall time r g = 1.6 ? ?? ? 2.6 us t d (on) turn-on delay time resistive switching (25 c) 6.3 ns t r rise time v gs = 10v, v ds = 0.5bv dss 5.8 ns t d (off) turn-off delay time i d = 100 ma 76 ns t f fall time r g = 1.6 ? ?? ? 470 ns v sd diode forward voltage v gs =0 v, i s = 1 a 1 v trr reverse recovery time i s = 1 a, d i s / dt = 100 a/us 300 400 ns q rr reverse recovery charge i s = 1 a, d i s / dt = 100 a/us 700 1200 uc symbol characteristic / test conditions min typ max unit bv dss drain-source breakdown voltage (v gs = 0v, i c = 0.25ma) 1000 volts v gs (th) gate threshold voltage (v ds = v gs , i c = 1000 ? a, t j = 25 c 2 4.5 r ds (on) drain-source on-resistance (v gs = 10v, i c = 1 a , t j = 25 c) 14 ohm i dss zero gate voltage drain current (v ds = 800 v, v gs = 0v, t j = 25 c) 25 ua i gss gate-source leakage current (v gs = 20 v, v ds =0v) 100 na
m s c1054 . p d f 3 / 22 / 01 all r a tings: d e v ice packaged in t o -3 or m icrosemi c oolpack package, t c = 25 c unless other w ise specified msafa1n100d fast mosfet die for implantable cardio defibrillator applications mechanical characteristics vgs vs vds vs id 3.5 3.7 3.9 4.1 4.3 4.5 4.7 4.9 0.01 0.1 1 10 100 vds(v) vgs(v) id=100ma id=50ma id=10ma id = 1 m a
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